|Module Title||SEMICONDUCTOR PHYSICS|
|Co-ordinator||Dr Tudor Jenkins|
|Other staff||Dr Andrew Evans, Professor Neville Greaves|
|Course delivery||Lecture||22 lectures|
|Seminars / Tutorials||2 tutorials|
|Assessment||Exam||End of semester examinations||80%|
|Course work||Test 1 Deadline (week of Semester): Week 5||10%|
|Course work||Test 2 Deadline (week of Semester): Week 11||10%|
This module provides a basic introduction to semiconductor physics, concentrating on those elements which underpin an understanding of the operation of semiconductor devices. The physics of important devices, such as bipolar and MOS transistors, will be detailed. In addition, an introduction to novel device structures which are being developed as a result of recent massive advances in semiconductor research will be provided.
After taking this module students should be able to:
Additional learning activities
Semiconductor materials and their crystal structure - Miller indices.
Intrinsic and extrinsic conductivity. Shallow and deep centres.
Diffusion of carriers.
Junctions in semiconductor systems - the metal-semiconductor junction, homo- and hetero-semiconductor-semiconductor junction, and the metal-insulator-semiconductor junction.
The planar p-n and bipolar transistor structure. Planar resistor and capacitor structure.
JFET, MOSFET and MESFET.
Power semiconductor devices (thyristor structures, bipolar power transistors, MOS power transistors).
Semiconductor optoelectronic devices. Detectors (photodiodes and transistors, photovoltaic devices, CCDs) and emitters (LEDs, LCDs and lasers).
Novel devices - HBTs, HEMTs, quantum well devices.
T E Jenkins. Semiconductor Science-Growth and Characteristation Techniques. Prentice Hall
A Bar-Lev. Semiconductor and Electronic Devices. Prentice Hall
M Jaros. Physics and Applications of Semiconductor Microstructures. Oxford