|Delivery Type||Delivery length / details|
|Assessment Type||Assessment length / details||Proportion|
|Semester Assessment||Essays written during the Semester||70%|
|Semester Assessment||Continuous Assessment: test||30%|
|Supplementary Exam||2 Hours Supplementary exam||100%|
After taking this module students should be able to:
- describe the complete route from the production of semiconductor substates and thin film structures to the production of packaged electronic devices
- critically analyze the technical issues involved (size, cost, power consumption etc.) in the production of an integrated device.
- critically analyze characterization methods for semiconductor materials and devices.
- design a simple digital circuit and layout the design using CAD tools.
1) wafer production - single crystal
2) wafer processing - lithography
4) device preparation
5) the VLSI design process
Physics and chemistry of bulk semiconductor growth. Epitaxial growth of thin films.
oxidation, insulating films; lithography (optical, x-ray, electron-beam, ion-beam); etching (wet chemical, plasma, reactive ion); dopant diffusion, ion implantation; metallisation.
Physics of electron, ion and photon interaction with matter.
Bulk and thin film characterisation techniques:
electrical (conductivity, mobility), optical (reflectance, luminescence), compositional (spectroscopy, microscopy), structural (diffraction, scanned probe).
Statistical process control, quality control analysis:
Device electrical testing, VLSI testing.
DV Morgan and K Board An Introduction to Semiconductor Microtechnology J Wiley Primo search I Brodie and JJ Murray Physics of Microfabrication Plenum Primo search M Jaros Physics and Applications of Semiconductor Microstructures Oxford Primo search N Weste and K Eshraghian Principles of CMOS design Primo search
This module is at CQFW Level 6